MTE670T & MTE670T-I PCIe M.2 SSDs (128GB/256GB/512GB/1TB)

In stock
Brand: Transcend

PCIe M.2 SSDs with 3D NAND technology


Enquire Now
Enquire about this product

Transcend's M.2 SSD MTE670T incorporates cutting-edge 3D NAND technology, allowing 112 layers of 3D NAND flash chips to be vertically stacked. This density breakthrough significantly increases storage efficiency as compared to 3D NAND at 96 layers. To achieve previously unheard-of transfer speeds, the MTE670T has a PCI Express (PCIe) Gen 3 x4 interface that is compatible with NVM Express (NVMe) 1.3 requirements. The MTE670T, which uses a 30" gold finger PCB with Corner Bond technology, is thoroughly tested in-house to ensure dependability in mission-critical applications. It has a 3K Program/Erase cycle endurance rating and an extended operating temperature range of -20°C to 75°C. For mission-critical applications, Transcend additionally provides the MTE670T-I with wide temperature capabilities (-40°C to 85°C). This ensures continued operation, increased durability, and ideal reliability.

Key Features:

  • Compliant with RoHS 2.0 standards
  • Compliant with NVM Express specification 1.3
  • Compliant with PCI Express specification 3.1
  • Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
  • PCIe Gen 3 x4 interface
  • SLC caching technology
  • Built-in LDPC ECC (Error Correction Code) functionality
  • Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
  • Advanced Garbage Collection
  • Advanced Global Wear-Leveling and Block management for reliability

This product is listed in SSD & Storage, Industries, Digital Signage, Partners, Industrial Automation, Gaming, Mining, Medical, Transport


Dimensions 80 mm x 22 mm x 2.23 mm (3.15" x 0.87" x 0.08")
Weight 9 g (0.32 oz)
M.2 Type
  • 2280-S2-M (Single-sided)
Form Factor
  • M.2 2280


Bus Interface
  • NVMe PCIe Gen3 x4


  • 128 GB/
  • 256 GB/
  • 512 GB/
  • 1 TB
Flash Type
  • 112-layer 3D NAND flash

Operating Environment

Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Extended Temp.
    -20°C (-4°F) ~ 75°C (167°F)
  • Wide Temp.
    -40°C (-40°F) ~ 85°C (185°F)
Storage Temperature -55°C (-67°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
  • 1500 G, 0.5 ms, 3 axis
Vibration (Operating) 20 G (peak-to-peak), 7 Hz ~ 2,000 Hz (frequency)


Power Consumption (Operation) 3.1 watt(s)
Power Consumption (IDLE) 0.4 watt(s)


Sequential Read/Write (CrystalDiskMark) Read: up to 2,100 MB/s
Write: up to 1,600 MB/s
4K Random Read/Write (IOmeter) Read: up to 150,000 IOPS
Write: up to 280,000 IOPS
Mean Time Between Failures (MTBF) 3,000,000 hour(s)
Terabytes Written (TBW) up to 960 TBW
Drive Writes Per Day (DWPD) 0.88 (3 yrs)
  • Speed may vary due to host hardware, software, usage, and storage capacity.
  • The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.
  • Terabytes Written (TBW) expresses endurance under the highest capacity.


  • CE/
  • FCC/
  • BSMI/
  • UKCA